industrial & multimarket data sheet rev. 2.0, 2010-01-08 final 2nd generation thinq!? 2nd generation thinq!? sic schottky diode IDV04S60C sic silicon carbide diode
2nd generation thinq!? sic schottky diode IDV04S60C final data sheet 2 rev. 2.0, 2010-01-08 1 description the second generation of infineon sic schottky diodes has emerged over the years as the industry standard. the idvxxs60c family is extending the already broad portfolio with the to220fullpak package. in order to greatly reduce the impact of the internal isolation of the fullpak on the thermal performance, infineon is applying its new diffusion soldering process for attaching the chip to the leadframe. the result of this is nearly identical thermal characteristics to that of the sic diodes in the non-isolated to220 package. features ? revolutionary semiconductor material - silicon carbide ? nearly no reverse / forward recovery charge ? high surge current capability ? fully isolated package with nearly similar rth,jc as the standard t0220 ? suitable for high temperature operation ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? switching behavior independent of forward current, switching speed and temperature benefits ? system efficiency improvement over si diodes ? system cost / size savings due to reduced cooling requirements ? good thermal performance without the need for additional isolation layer and washer ? enabling higher frequency / increased power density solutions ? higher system reliability due to lower operating temperatures and less fans ? reduced emi applications fully isolated to220 package for e.g. ccm pfc; motor drives; solar applications; ups 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v dc 600 v q c 8nc i f @ t c < 100c 4a table 2 pin definition pin 1 pin2 pin 3 c a n.a. type / ordering code package marking related links IDV04S60C pg-to220 fullpak d04s60c ifx sic diodes webpage
2nd generation thinq!? sic schottky diode IDV04S60C table of contents final data sheet 3 rev. 2.0, 2010-01-08 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table of contents
2nd generation thinq!? sic schottky diode IDV04S60C maximum ratings final data sheet 4 rev. 2.0, 2010-01-08 2 maximum ratings 3 thermal characteristics table 3 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous forward current i f --4 a t c = < 110c surge non-repetitive i f, sm --32 t c = 25c, t p = 10 ms forward current, sine halfwave - - 23 t c = 150c, t p = 10 ms non-repetitive peak forward current i f, max - - 190 t c = 25c, t p = 10 s i2 t value i2dt - - 4 a2s t c = 25c, t p = 10 ms -2 t c = 150c, t p = 10 ms repetitive peak reverse voltage v rrm - - 600 v t j = 25c diode dv/dt ruggedness dv/dt - - 50 v/ns v r = 0...480 v power dissipation p tot --26 w t c = 25 c operating and storage temperature t j ; t stg - 55 - 175 c mounting torque - - 50 ncm m2.5 screws table 4 thermal characteristics to-220 fullpak parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 5.6k/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s
2nd generation thinq!? sic schottky diode IDV04S60C electrical characteristics final data sheet 5 rev. 2.0, 2010-01-08 4 electrical characteristics table 5 static characteristics parameter symbol values unit note / test condition min. typ. max. dc blocking voltage v dc 600 - - v t j = 25 c, i r = 0.05 ma diode forward voltage v f -1.71.9 i f = 4 a, t j = 25 c -22.4 i f = 4 a, t j = 150 c reverse current i r -0.550a i r = 600 v, t j =25 c - 2 500 i r = 600 v, t j =150 c table 6 ac characteristics parameter symbol values unit note / test condition min. typ. max. total capacitive charge q c -8- nc v r = 400 v, f i f max di f /dt =200 a/ s, t j =150 c switching time 1) 1) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di / dt ), different from t rr which is dependent on t j , i load and di / dt . no reverse recovery time constant t rr due to absence of minority carrier injection. t c -- <10ns c - 130 - pf v r = 1 v, f = 1 mhz -20- v r = 300 v, f = 1 mhz -20- v r = 600 v, f = 1 mhz
2nd generation thinq!? sic schottky diode IDV04S60C electrical characteristics diagrams final data sheet 6 rev. 2.0, 2010-01-08 5 electrical characteristics diagrams table 7 power dissipation diode forward current p tot = f( t c ) i f =f(t c ); t j 175 c table 8 typ. forward characteristic typ. forward characteristic in surge current i f = f (v f ); t p =400 s; parameter: t j i f = f (v f ); t p =400 s; parameter: t j
2nd generation thinq!? sic schottky diode IDV04S60C electrical characteristics diagrams final data sheet 7 rev. 2.0, 2010-01-08 table 9 typ. capacitance charge vs. current slope 1) typ. reverse current vs. reverse voltage q d =f(dif/dt)4); tj = 150 c ; i f i f max i r =f(v r ) 1) only capacitive charge occuring, guaranteed by design table 10 typ. transient thermal impedance typ. capacitance vs. reverse voltage z thjc = f(tp) ; parameter: d = t p / t c=f ( v r ); t c =25 c , f =1 mhz
2nd generation thinq!? sic schottky diode IDV04S60C electrical characteristics diagrams final data sheet 8 rev. 2.0, 2010-01-08 table 11 typ. c stored energy e c =f(v r )
2nd generation thinq!? sic schottky diode IDV04S60C package outlines final data sheet 9 rev. 2.0, 2010-01-08 6 package outlines figure 1 outlines to-220 fullpak, dimensions in mm/inches
2nd generation thinq!? sic schottky diode IDV04S60C revision history final data sheet 10 rev. 2.0, 2010-01-08 7 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2010-01-08 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, in cluding without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in th e human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2nd generation thinq!? 2nd generation thinq!? sic schottky diode revision history: 2010-01-08, rev. 2.0 previous revision: revision subjects (major changes since last revision) 2.0 release of final data sheet
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